Electron Beam Lithography Process Optimization: An Experimental Design Study
Technical Report from the year 2011 in the subject Design (Industry, Graphics, Fashion), University of Southern California, language: English, abstract: Currently, nanowires have aroused intensive attention due to their interesting electric and optical properties as well as potentially wide application (For example, nanowires can be used as a promising structure for transistor channels). For compound semiconductor nanowires, Nanoscale Selective Area MOCVD (Metalorganic Chemical Vapor Deposition), or NS‐SAG, is a very attractive growth technique for the fabrication of sophisticated nanowire structure, because by using this technique, diameter and location of wires are controllable, with no incorporation of unwanted metals. It is achieved by deposition of a nano‐openingarray ‐patterned dielectric mask above the substrate. Since crystals cannot be formed on dielectric mask, nanowire growth only occurs at openings, with desired diameters and locations, as shown in Fig 1. Pattern of nano opening arrays is of vital importance since it governs the size, location and density of nanowires as wells as growth rate and behavior.
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2‐factor interaction 200nm opening diameter 324 measures 500nm pitch 54 writing processes Acceleration Voltage kV changed between arrays Chemical Vapor Deposition choose defining relation D/A converter Design Factor Process diameters and locations distance Distance(mm dosage and acceleration Electron Beam Lithography electron dosage Electron Dosage(fC Experimental Range Factorial Design Factor Factorial Experimental Design Factors and Levels Follow the two‐step full factorial design Full Factorial Experimental given in Appendix half‐normal plot identify any significant interaction factorial effects Levels Factor Level location and dispersion minimum response variances nano opening arrays Nanoscale Selective Area nominal‐the‐best problem NS‐SAG number of replicates Opening Diameter(nm optimal setting pitch and 200nm pitch and opening Planning Matrix procedure for nominal‐the‐best processes are needed qualitative factor replicates per treatment run‐to‐run selecting the level significant factorial effects significant main effect six arrays Step Size nm three‐level design three‐level full factorial Two‐level design Two‐level factorial design Two‐Level Full Factorial writing field