Electron Beam Lithography Process Optimization
Technical Report from the year 2011 in the subject Design (Industry, Graphics, Fashion), grade: -, University of Southern California, language: English, abstract: Currently, nanowires have aroused intensive attention due to their interesting electric and optical properties as well as potentially wide application (For example, nanowires can be used as a promising structure for transistor channels). For compound semiconductor nanowires, Nanoscale Selective Area MOCVD (Metalorganic Chemical Vapor Deposition), or NS‐SAG, is a very attractive growth technique for the fabrication of sophisticated nanowire structure, because by using this technique, diameter and location of wires are controllable, with no incorporation of unwanted metals. It is achieved by deposition of a nano‐openingarray ‐patterned dielectric mask above the substrate. Since crystals cannot be formed on dielectric mask, nanowire growth only occurs at openings, with desired diameters and locations, as shown in Fig 1. Pattern of nano opening arrays is of vital importance since it governs the size, location and density of nanowires as wells as growth rate and behavior.
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2-factor interaction 200nm opening diameter 3-Level Full Factorial 324 measures 500nm pitch acceleration voltage Va Acceleration Voltage Vacc array pattern Beam Lithography Process changed between arrays Chemical Vapor Deposition D/A converter Design Study GRIN diameters and locations dielectric mask distance Distance(mm dosage and acceleration Electron Beam Lithography electron dosage Electron Dosage(fC Experimental Design Study Experimental Range Factorial Design Factor Factorial Experimental Design Factors and Levels full factorial design Full Factorial Experimental given in Appendix Gu Electron Beam identify any significant interaction factorial effects linear regression Linfei Gu Electron Lithography Process Optimization location and dispersion minimum response variances nominal-the-best problem optimal setting Optimization An Experimental pitch and 200nm pitch and opening Planning Matrix procedure for nominal-the-best processes are needed qualitative factor replicates per treatment Rohan Handa selecting the level significant factorial effects significant main effect six arrays Step Size nm three-level full factorial Two-Level Full Factorial Voltage Vacc kV writing field