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QUESTIONS OF STABILITY AND A REVIEW OF THE LITERATURE
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A/sec A15 phase A15 structure A2 phase added oxygen Al5 grain Al5 Nb-Si amorphous amounts analysis annealing appears appendix atomic percent bright field image composition grading compounds compression deposition rate determine diffraction pattern diffractometer effects of oxygen electron beam evaporation epi film epi layer containing equilibrium phase Gavaler graded films graded layer grading process grain boundaries high-Tc increase initial growth lattice constants lattice mismatch lattice parameter measured metastable Nb-Ge Nb-Ir lattice Nb-Ir layer Nb-rich Nb-Si films Nb3Ge Nb3Si NbSi nucleation oxygen doping oxygen pressure oxygen-doped films peaks phase diagrams Phys planes polycrystalline present R. H. Hammond radii samples sapphire substrates second phase selected area diffraction shows silicon single-phase Al5 sputtering stabilize the A15 stoichiometric studies substrate temperature superconducting synthesis T. H. Geballe Tc onset Tc versus Tc's technique tetragonal thermocouple thickness Ti^P Ti3Au Ti3P phase torr of oxygen tovered Waterstrat whith X-ray diffraction