Electron Microscopy and Analysis 1993: Proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference, University of Liverpool, 14-17 September 1993
Alan J. Craven
Institute of Physics Publishing, 1993 - Science - 546 pages
EMAG93 was organized by the Electron Microscopy and Analysis Group of the Institute of Physics in conjunction with the Royal Microscopical Society and the Institute of Materials, and was held at the University of Liverpool on 14-17 September 1993.
The proceedings comprise 128 papers from the meeting which have been subdivided into the following sections: plenary lectures, microanalysis, electron diffraction, surface analysis, high resolution imaging, scanned probe techniques, materials analysis, composite materials, metals and alloys, catalysis, and new instrumentation and techniques.
The papers in this volume present the very latest developments in the field of electron microscopy and demonstrate the continuing importance of this relatively new discipline. Taken as a whole, these proceedings provide an important reference point for all those working in the field.
What people are saying - Write a review
We haven't found any reviews in the usual places.
Other editions - View all
alloy aluminium amorphous Analysis Group Conf angle annealing aperture atoms Bloch waves bonding Burgers vector calculated carbon catalyst Cavendish Laboratory coherent composition contrast crystal defects defocus density detector determined diameter diffraction patterns diffusion dislocations edge EELS effects electron beam electron diffraction Electron Microscopy emission energy loss experimental Figure film Fresnel fringes function grain boundary growth HOLZ lines HREM intensity interface lattice layer Liverpool magnetic Materials Science matrix measured metal method micrograph Microscopy and Analysis microstructure misfit observed obtained optical orientation oxide oxygen Paper presented parallel parameters particles peak phase Phys plane plasmon probe profiles region Rodenburg sample scanning scattering segregation selected area diffraction shown in Fig shows silicon silicon nitride simulations spatial specimen spectra spectroscopy spectrum stacking fault structure factors substrate surface technique temperature thickness thin tilt transmission electron microscope twin Ultramicroscopy values vector voltage X-ray zone axis