## Electrons and Holes in Semiconductors: With Applications to Transistor Electronics |

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acceptors applied approximation atoms average Bardeen behavior Bloch wave bond boundary conditions Brillouin zone carriers Chapter charge collector collision conduction band consider corresponding derived discussed in Section distribution donors drift eigenfunctions electric field electron volts electrons and holes emitter current energy bands energy levels energy surfaces equal equilibrium equivalent circuit excess electrons expression Fermi level filament flow formula frequency G. L. Pearson germanium given group velocity Hall effect hole current hole density holes and electrons impurity injected integral lattice constant magnetic fields matrix element mean free metal mobility motion negative noise number of electrons obtained ohms operator oscillators p-n junctions particle Phys positive problem produced quantum mechanics recombination relationship represented resistance result sample semiconductor Shockley shown in Figure silicon solution temperature theory thermal tion type-A transistor unit cell valence valence-bond band vector velocity voltage volts w-type wave functions wave-packet zero