Engineering Quantum Mechanics
There has been growing interest in the model of semiconductor lasers with non-Markovian relaxation. Introducing senior and graduate students and research scientists to quantum mechanics concepts, which are becoming an essential tool in modern engineering, Engineering Quantum Mechanics develops a non-Markovian model for the optical gain of semiconductor, taking into account the rigorous electronic band-structure and the non-Markovian relaxation using the quantum statistical reduced-density operator formalism. Example programs based on Fortran 77 are provided for band-structures of zinc-blende and wurtzite quantum wells.
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Derivation of Equation 4 82
Fortran 77 Code for the Band Structure
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ˆ ˆ annihilation operators assume band edge bandgap biaxial black hole Bloch calculation collapsing matter conduction band coordinates cosh crystal orientation deﬁned denote density operator derived effective mass effective mass equation eigenstate eigenvalues eigenvectors electron energy entangled envelope function event horizon ﬁeld ﬁrst Hamiltonian Hawking radiation Hermitian operator Hilbert space integral interaction interband intraband relaxation laser lattice matched layer line shape function Markovian momentum matrix elements non-Markovian obtain optical gain parameters particles Poisson bracket polarization potential quantized quantum mechanics qubit relation Schrödinger equation semiconductor spin—orbit subband substrate tensor tion unit cell unitary valence band valence band structure vector wave function wurtzite zinc blende α α α β αβ Δ Δ ε ε ε ν ν πω ρ ρ τ τ τ ττ φ φ Ψ Ψ Ψ ΨΨ ωω