From Physics to Devices: Light Emissions in Silicon: Light Emissions in Silicon: From Physics to Devices
Academic Press, Nov 14, 1997 - Technology & Engineering - 351 pages
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
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Chapter 2 Band Gaps and Light Emission in SiSiGe Atomic Layer Structures
Chapter 3 Radiative Isoelectronic Impurities in Silicon and SiliconGermanium Alloys and Superlattices
Chapter 5 Silicon and Germanium Nanoparticles
Abstreiter Allan annealing Appl atoms Auger band edge band structure blue PL bound exciton Brillouin zone Brus bulk c-Si Calcott calculated Canham carrier centers clusters concentration conduction band crystal crystallites dangling bond decay defect Delerue density dependence devices diffusion diodes direct gap doped effect efficiency electroluminescence electron electron-hole emitting energy gap epitaxial etching excitation exciton Fauchet GaAs growth heterostructures hole III-V increases indirect bandgap infrared interface ion implantation isoelectronic isoelectronic impurities Kanemitsu Kimerling Lannoo laser lattice layer Lett lifetime light emission Lockwood low temperatures luminescence material molecular beam epitaxy observed optical properties optical transitions phonon Photoluminescence Phys PL intensity PL peak energy PL spectra porosity porous Proc quantum confinement radiative recombination red PL room temperature samples Semiconductors shift shows silicon SiO2 Solid spectrum ſt-Si strain substrate superlattices surface Symp T-Si thickness Tsybeskov valence band visible waveguide wavelength Zunger