Fundamentals of Modern VLSI Devices

Front Cover
Cambridge University Press, Oct 13, 1998 - Technology & Engineering - 469 pages
0 Reviews
This book examines in detail the basic properties and design, including chip integration, of CMOS and bipolar VLSI devices and discusses the various factors that affect their performance. The authors begin with a thorough review of the relevant aspects of semiconductor physics, and proceed to a description of the design of CMOS and bipolar devices. The optimization of these devices for VLSI applications is also covered. The authors highlight the intricate interdependencies and subtle tradeoffs between those device parameters, such as power consumption and packing density, that affect circuit performance and manufacturability. They also discuss in detail the scaling, and physical limits to the scaling, of CMOS and bipolar devices. The book contains many exercises, and can be used as a textbook for senior undergraduate or first-year graduate courses on microelectronics or VLSI devices. It will also be a valuable reference volume for practicing engineers involved in research and development in the electronics industry.

What people are saying - Write a review

We haven't found any reviews in the usual places.

Other editions - View all

About the author (1998)

Yuan Taur is a Professor of Electrical and Computer Engineering at the University of California, San Diego. He spent 20 years at IBM's T. J. Watson Research Center where he won numerous invention and achievement awards. He is an IEEE Fellow, Editor-in-Chief of IEEE Electron Device Letters, and holds 13 US patents.

Tak H. Ning is an IBM Fellow at the T. J. Watson Research Center, New York, where he has worked for over 35 years. A Fellow of the IEEE and the American Physical Society, and a member of the US National Academy of Engineering, he has authored more than 120 technical papers and holds 36 US patents. He has won several awards, including the ECS 2007 Gordon E. Moore Medal, the IEEE 1991 Jack A. Morton Award and the 1998 Pan Wen-Yuan Foundation Outstanding Research Award.

Bibliographic information