Fundamentals of Solid-state Electronics: Solution Manual

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World Scientific, 1996 - Technology & Engineering - 200 pages
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This Solution Manual, a companion volume of the book, Fundamentals of Solid-State Electronics, provides the solutions to selected problems listed in the book. Most of the solutions are for the selected problems that had been assigned to the engineering undergraduate students who were taking an introductory device core course using this book.This Solution Manual also contains an extensive appendix which illustrates the application of the fundamentals to solutions of state-of-the-art transistor reliability problems which have been taught to advanced undergraduate and graduate students.
 

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Contents

Electrons Bonds Bands and Holes
1
Homogeneous Semiconductor at Equilibrium
21
Drift Diffusion Generation Recombination Trapping Tunneling
41
MetalOxideSemiconductor Capacitor MOSC
51
PN and Other Junction Diodes
61
MetalOxideSemiconductor and Other FieldEffect Transistors
71
Bipolar Junction Transistor and Other Bipolar Transistor Devices
91
Appendix Transistor Reliability Objectives Summary
101
Interface Trap Generation by Hot Electrons and Holes
122
Interface Trap CreationDestruction at High Current Density
129
Oxide Traps
131
Atomic Configurations and Electronic Trapping at Oxide Traps
132
Creation and Destruction of Oxide Traps
136
Charging and Discharging Oxide Traps
139
Acceptor Hydrogenation
141
Atomic Configurations of Hydrogenated Acceptors
142

Introduction
102
Interface Traps
103
Surface States on Clean Silicon Surfaces
105
Interface Traps on Oxidized Silicon
106
Interface Trap CreationDestruction by Hydrogen
110
Interface Trap Generation by VUV Light
113
Impurity Interface Trap
119
Acceptor Hydrogenation Kinetics
147
Electromigration
148
Empirical Characterization of Electromigration
149
Bibliography and References
151
Problems and Solutions
155
Transistor Reliability Problems and Solutions 177200
177
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