Gallium-Nitride (GaN) II
Academic Press, Oct 22, 1998 - Technology & Engineering - 489 pages
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.
Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
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CHAPTER 3 Defects in Bulk GaN and Homoepitaxial Layers
CHAPTER 4 Hydrogen in IIIV Nitrides
CHAPTER 5 Characterization of Dopants and Deep Level Defects in Gallium Nitride
CHAPTER 6 Stress Effects on Optical Properties
CHAPTER 7 Strain in GaN Thin Films and Heterostructures
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absorption acceptor activation energy Akasaki AlGaN alloys Amano annealing Appl atomic bandgap beam biaxial buffer layer bulk GaN carrier concentration conduction band deep levels defects density dependence deposition detector devices diffraction diode donor dopant doping effect electric field electron emission exciton experimental function GaAs gallium nitride GaN films grown Götz homoepitaxial HVPE hydrogen III-V nitrides impurities interface Khan Kisielowski laser lattice constant Lett Liliental-Weber luminescence magnetic material measured Mg-doped GaN Miragliotta MOCVD molecular beam epitaxy Molnar Moustakas n-type GaN Nakamura Neugebauer nitrogen nonlinear nonlinear optical observed ODMR p-n junction p-type Pankove parameter peak photoconductivity photodetectors photoluminescence photon photon energy Phys polarization Proc quantum resonance sapphire substrates Semiconductors shallow shown in Fig Silicon spectra spectroscopy strain stress structure studies superlattice surface thermal thickness transition undoped valence band values vapor phase epitaxy wavelength wurtzite X-ray