Gate stack and silicide issues in silicon processing II: symposium held April 17-19, 2001, San Francisco, California, U.S.A.

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S. A. Campbell
Materials Research Society, Feb 26, 2002 - Computers - 288 pages
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As technologists consider scaling microelectronic devices below the 100nm node, it has become increasingly clear that many new materials will be introduced into the fab line, not only for interconnect, but into the basic transistor itself. Determining the best materials, the best processing techniques for depositing and using these materials, and integrating them into mainstream CMOS process flows are all extremely challenging tasks. Much of this volume attempts to find a replacement for silicon dioxide. Hafnium dioxide, zirconium dioxide, and their silicates and aluminates are the subjects of intense scrutiny, but other materials are being considered as well. Obtaining a suitable large capacitance, while simultaneously obtaining low charge density in the film, and finding a material that has adequate thermal stability is proving difficult. A second focus of the volume is the material and process used to form the self-aligned silicide. Real-time electron microscopy of metal-silicon reactions is providing valuable new insights.

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Contents

Preface xi
Materials and Physical Properties of Novel Highk and Mediumk
UltraThin Zirconium Oxide Films Deposited by Rapid Thermal
Copyright

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