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HELICON WAVE PROPAGATION
B Boundary Value Considerations
4 other sections not shown
amplifier application of bias application of contacts applied attenuation bias voltage boundary value carrier cavity Cavity Resonance Contacted Sample Cornell University coupling crystal CRYSTAL DETECTOR dc magnetic field detector dielectric constant dimensional resonances dispersion relation electric field electron mobility etch evaporated Figure 11 Fujisada geometry guide losses helicon effects helicon experiments helicon modes helicon propagation Helicon Resonance Absorption Helicon Standing Wave HELICON WAVE PROPAGATION helicon wavelength increased Indium Antimonide indium solder InSb sample inserted instrumentational techniques kilogauss klystron Libchaber magnetoresistance effect microwave bridge microwave power mobility mode number negative resistance noise observed ohmic contacts oriented peak Periodic Perturbations periodic structure Phase Sensitive Detection Phys plasma frequency Potzl power level Proc produced ratio rectangular sample reflected power reflected signal resonant frequency Sample Dimension semiconductors shorting plane Solid State Plasma Standing Wave Resonances surface wave temperature Thesis uncontacted V/cm varies VSWR wave vector waveguide X-band