High Brightness Light Emitting Diodes
Academic Press, Feb 9, 1998 - Technology & Engineering - 469 pages
Volume 48in the Semiconductors and Semimetals series discusses the physics and chemistry of electronic materials, a subject of growing practical importance in the semiconductor devices industry. The contributors discuss the current state of knowledge and provide insight into future developments of this important field.
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Chapter 2 Overview of Device Issues in HighBrightness LightEmitting Diodes
Chapter 3 AlGaAs Red LightEmitting Diodes
Chapter 4 OMVPE Growth of AlGaInP for HighEfficiency Visible LightEmitting Diodes
Chapter 5 AlGaInP LightEmitting Diodes
Chapter 6 Applications for HighBrightness LightEmitting Diodes
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active layer AlGaAs AlGaAs red AlGalnP AlGaN AlGaſnR AlInGap alloys ambient Appl automotive signal backlighting module band bandgap energy blue LEDs carrier cavity circuit color composition concentration confining layers Cryst current-spreading density devices diffusion direct bandgap dopant doping Electroluminescent Electron emission emitted epitaxial external quantum efficiency forward current forward voltage function Ga1-x)o sInos GaAs substrate gallium arsenide gallium nitride GaN films green grown growth temperature heterostructure high-brightness III-V InCaM InGaN injection laser laser diodes lattice LCD display LED chip LED lamps LED technology Lett light source light-emitting diode light-emitting diode LED luminous flux luminous intensity luminous sterance nonradiative optical oxygen p-n junction p-type p-type GaN peak wavelength phosphide Phys pixel quantum efficiency reactor recombination red LEDs Reprinted from Nakamura room temperature Semiconductors shown in Fig SQW LEDs Stringfellow structure surface techniques thermal thickness transparent typically wafer wafer-bonded window layer