Hopping transport in solids
The hopping process, which differs substantially from conventional transport processes in crystals, is the central process in the transport phenomena discussed in this book. Throughout the book the term ``hopping'' is defined as the inelastic tunneling transfer of an electron between two localized electronic states centered at different locations. Such processes do not occur in conventional electronic transport in solids, since localized states are not compatible with the translational symmetry of crystals. The rapid growth of interest in hopping transport has followed in the footsteps of the development of physics of disordered systems during the last three decades. The intense interest in disordered solids can be attributed to the technological potential of the new noncrystalline materials, as well as to new fundamental problems discovered in solid state physics when a crystal is no longer translationally symmetric. In the last decade hopping systems such as organic polymers, biological materials, many oxide glasses, mesoscopic systems, and the new high-temperature superconducting materials in their normal state have attracted much interest. New phenomena investigated recently include interference and coherent scattering in variable range hopping conduction, mesoscopic effects, relaxation processes and thermo-electric power, and thermal conductivity caused by hopping transport. This volume presents the reader with a thorough overview of these recent developments, written by leading experts in the various fields.
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Variablerange hopping in the critical regime
The Hall effect in the VRH conduction regime
21 other sections not shown
absorption AC conductivity amorphous amplitude approximation average behavior calculated carriers Castner characteristic characteristic field chemical potential cluster coefficient contribution correlation Coulomb gap critical regime crossover decrease density dielectric dielectric constant discussed disordered donor Doped Semiconductors doping effect Eksp electron energy equation experimental exponential factor Fermi level fluctuations fracton frequency gate voltage hopping conduction hopping rate impurity increases interaction intermediate frequency Lett localization length low temperatures magnetic field magnetoresistance magnitude metallic mobility edge Mott law N/Nc negative magnetoresistance non-linear observed obtained oscillations parameters paths peaks percolation percolation threshold phase transition Philos phonon Phys polarons Pollak polyacetylene predictions random region relaxation resistance resonant pair samples scaling scattering scattering amplitude semiconductors Shklovskii and Efros Si:As Si:P Solid solitons spin temperature dependence Teor theory thermal thermopower transport tunneling variable-range hopping VRH conduction wave function wavefunctions width Zvyagin