Identification of Defects in Semiconductors
Academic Press, Jul 2, 1998 - Technology & Engineering - 376 pages
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
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Chapter 2 MagnetoOptical and Electrical Detection of Paramagnetic Resonance in Semiconductors
Chapter 3 Magnetic Resonance of Epitaxial Layers Detected by Photoluminescence
Contents of Volumes in This Series
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absorption acceptor AlGaAs angular annealing antisite applied atoms band bandgap calculated charge cluster concentration configuration Corbel correlation crystal density dependence diamagnetic diffusion divacancy donor doped Doppler broadening EDEPR effect ENDOR epitaxial EPR spectrum equations Estle example experimental experiments free positron frequency g-values GaAs Glaser Hartree-Fock Hautojärvi hydrogen hyperfine interaction hyperfine parameters III-V illumination impurities interstitial ionization Jahn-Teller distortion lattice layers Lett lines magnetic field MCDA measured metastable microwave momentum muon muon spin muonium Muşc n-type n-type GaAs neighbors nuclei observed ODMR open volume optical orbitals pair paramagnetic photon Phys positron annihilation positron lifetime positron trapping Puska recombination relaxation resonance Saarinen sample Section Semiconductors shallow shown in Fig Si-doped signal silicon Spaeth spectra spectroscopy spin polarization splitting Stich structure studies symmetry technique temperature thermal transition trapping coefficient trapping rate valence valence band values Watkins wave function