Identification of Defects in Semiconductors
Academic Press, Oct 27, 1998 - Science - 434 pages
GENERAL DESCRIPTION OF THE SERIES
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.
Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
GENERAL DESCRIPTION OF THE VOLUME
This volume has contributions on Advanced Characterization Techniques with a focus on defect identification. The combination of beam techniques with electrical and optical characterization has not been discussed elsewhere.
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Chapter 2 Defect Identification Using Capacitance Spectroscopy
Chapter 3 Vibrational Spectroscopy of Light Element Impurities in Semiconductors
Chapter 4 Defect Processes in Semiconductors Studied at the Atomic Level by Transmission Electron Microscopy
Chapter 5 Scanning Tunneling Microscopy of Defects in Semiconductors
absorption acceptor activation energy AlGaAs anharmonicity annealing Appl axis bandgap calculated capacitance capture carrier characterized charge Chemical Mapping concentration conduction band conﬁguration conﬁrmed crystal dangling bonds decay deep level deﬁned depletion region determined diode DLTS donor dopants doped DX centers DX levels effect electric ﬁeld gradient electron energy example excited exciton experimental ﬁeld gradient tensor ﬁrst formation fraction frequency function GaAs hydrogen identiﬁcation implantation impurity infrared intensity interaction interstitial isotope lattice image layer Lett Lightowlers luminescence measured neighbors Newman nuclear observed optical center orientation oxygen p-type pairs Pajot parameters perturbation photoluminescence photon Phys point defects probe atoms proﬁles QUANTITEM reﬂections sample Section shifts shown in Fig shows silicon spectra spectrum spin Stavola structure surface symmetry techniques temperature thermal emission transition trap uniaxial stress vacancy valence band vector vibrational modes vibrational spectroscopy voltage Wichert zero-phonon line