In situ process diagnostics and modelling: symposium held April 6-7, 1999, San Francisco, California, U.S.A.
Materials Research Society, Aug 11, 1999 - Technology & Engineering - 199 pages
Fabrication of future generations of advanced film-based devices will require monitoring of ultrathin layers with sharp interfaces in which the layer thickness may reach atomic dimensions. It therefore becomes increasingly more important to be able to monitor film-deposition processes in situ and in real time under different background pressure conditions. Diffusion or surface segregation processes relevant to device fabrication also need to be characterized. To these ends, a variety of complimentary in situ, real-time characterization techniques are needed to advance the science and technology of thin films and interfaces. This book offers an interdisciplinary exchange of ideas from researchers with cross-disciplinary expertise. The application of in situ characterization methods are discussed in relation to different materials including oxides, nitrides, semiconductors, and metals analyzed at the macroscopic, microscopic and nanoscale level.
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In Situ RealTime Studies of Film Growth Processes Using
Combined Spectroscopic Ellipsometry and Ion Beam
In Situ RealTime Depth Profiling by Elastic Recoil Detection
24 other sections not shown
1999 Materials Research activation energies AlGaAs ambient analysis analyzer angle annealing Appl atoms chamber characterization chemical vapor deposition composition constant crystallization current density decrease deposition rate desorption detection detector dielectric function electron emission epitaxy etch rate experimental Figure film deposition film growth GaAs in-situ increasing intensity interface ion beam J.A. Schultz layer thickness mass spectroscopy Materials Research Society measured microscopic monitoring MSRI multichannel ellipsometer nitriding observed obtained optical properties oxygen p-layer parameters partial pressure peak peritectic phase photodiode photon photon energy Phys plasma plasma etching polarizer pressure Proc R.W. Collins range ratio reaction real-time reflectance RHEED rotating sample scattering semiconductor setpoint shows silicide silicon SixNy solar cell source vapor spectra spectroscopic ellipsometry spectrum sputter deposition structure studies substrate substrate temperature Symp technique Technol thermal cleaning thin films Thin Solid Films TiNx films TOF-ISARS UV/ozone wafer wavelength x-ray YBCO