Infrared Detectors provides comprehensive coverage of this important aspect of infrared technology, including details of recent research efforts directed toward improving the performance of single element devices, large electronically scanned arrays, and higher operating temperatures. Discussions include HgCdTe detectors, Schottky barrier photoemissive devices, silicon, germanium, and InSb detectors, and quantum well infrared photodetectors. The author also considers IR thermal detectors, including details on phyroelectric detectors, micromachined silicon bolometers, and high Tc superconductor detectors.
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Focal Plane Arrays
Theory of Thermal Detectors
Other Thermal Detectors
Theory of Photon Detectors
Extrinsic Silicon and Germanium Detectors
SchottkyBarrier Photoemissive Detectors
HgZnTe and HgMnTe Detectors
Semiconductor Superlattice and Quantum Well Detectors
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absorption achieved alloy applications Auger background bandgap bias bolometers capacitance carrier concentration CdZnTe charge coefficient conduction band crystal cutoff wavelength dark current density dependence depletion region detectivity devices dielectric diffusion diode doping effect electric field electron element epitaxial equation extrinsic fabricated film flux FPAs frequency GaAs generation-recombination growth HgCdTe HgCdTe photodiodes HgZnTe hole hybrid implantation impurity increase infrared detectors injection InSb integration interface intersubband lattice layer lead salt limited long wavelength LWIR material metal microbolometer minority carrier monolithic multiplexer MWIR NETD noise operating temperature optical p-n junction p-type parameters PbSnTe PbTe performance photoconductive detectors photoconductors photodetectors photodiodes photon pixel potential PtSi pyroelectric pyroelectric detectors quantum efficiency QWIPs radiation range readout recombination RoA product Schottky barrier Schottky-barrier semiconductor sensitivity shown in Figure signal silicon spectral response structure substrate superlattice surface techniques thermal detectors thickness tunnelling typical valence band values voltage
Page 670 - HgCdTe is characterised by high optical absorption coefficient and quantum efficiency and relatively low thermal generation rate compared to extrinsic detectors and QWIPs. The extrinsic photon detectors require more cooling than intrinsic photon detectors having the same long wavelength limit.