Infrared detectors, state of the art: 23-24 July 1992, San Diego, California
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Uncooled thermal imaging at Texas Instruments 173502
Recent improvements of IRFPAs at LIR 173503
Selective IR photodetectors using surface plasmon resonance 173504
17 other sections not shown
absorption anneal Appl applications B. F. Levine background band band gap barrier calculated CdTe CdZnTe CdZnTe substrate characteristics coefficient crosstalk curve cutoff wavelength dark current decreases demonstrated density detectivity detector arrays detector structure device diode DLHJ dopant doped effect electrical electron energy epilayers fabricated Figure focal plane arrays function FWHM GaAs substrate grown growth heterojunction HgCdTe hybrid imaging increase indium infrared detectors InGaAs integration interface intersubband transition laser leakage current Lett limited LWIR material measured metal MOCVD MQW detectors MQW structure multiple quantum multiplexer MWIR n-type noise normal incidence operating optical output p-n junction parameters peak performance photoconductive photocurrent photodetectors photodiode photon photoresponse Phys pixel PtSi quantum efficiency quantum well infrared QWIP radiation samples Schottky semiconductor sensor shown in Fig shows signal silicon substrate technique temperature thermal thickness transimpedance amplifier uniformity VLPE technology wafer width