International Conference on Optical Storage, Imaging, and Transmission of Information: 14-16 May, 1996, Kiev, Ukraine
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use of Gaussian recording beams
Thin films of vitreous chalcogenide semiconductors for longduration storage of information
New media based on modified silicon films for laser pulsed recording 305525
29 other sections not shown
a-Se absorption acceleration aggregates amorphous amplitude anisotropy calculation chalcogenide chalcogenide glasses channel components corresponding crystallization curve cylinder decrease density dependence determined device dielectric dielectric function diffraction efficiency distribution effect electron energy error signal evaporation experimental exposure film thickness focusing frequency function Gaussian Gaussian beams glass grating groove hologram holographic recording increase information carrier input intensity interaction investigated irradiation Kiev laser beam laser radiation lens light linear linear motor magnetic field materials matrix measurements method MOAM modulation multilayer nonlinear objective lens obtained optical bistability optical disc optical information optical recording optoelectronic output oxide parameters phase photodetector photoinduced photoluminescence photopolymer Phys pits plane polarization possible probe pulse Raman scattering readout recording layer recording media reflection coefficient refractive index sample semiconductors shown spectral spectrum spiropyrans storage structure substrate temperature thermal thin films tracking transformations transition transmission Ukraine vector wavelength