Ion Implantation Technology - 94S. Coffa, G. Ferla, E. Rimini, F. Priolo The aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas as diverse as materials science, device production and advanced ion implanters. The contents open with a paper on the future developments of the microelectronics industry in Europe within the framework of the global competition. The subsequent invited and oral presentations cover in detail the following areas: trends in processing and devices, ion-solid interaction, materials science issues, advanced implanter systms, process control and yield, future trends and applications. |
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acceleration amorphous analysis annealing Appl applications atoms beam current boron calculated chamber channeling charge compared concentration contamination corresponding damage decrease defects density dependence depth determined device diffusion direction distribution dose effect electrical electron Elsevier energy etching experimental experiments extraction Figure formed function higher increase indicated Instr interface ion beam ion implantation Italy lateral layer levels limit loops lower magnetic mass material measured metal Meth method Nucl observed obtained oxide parameters particles peak performed Phys plasma position potential present pressure production proļ¬le profiles range reduced References region reported resistance respectively samples scan Science shown shows signal silicon SIMS simulation spectra structure substrate surface technique Technology temperature thermal thickness tion voltage wafer yield