Ion implantation: equipment and techniques : proceedings of the Fourth International Conference, Berchtesgaden, Fed. Rep. of Germany, September 13-17, 1982
Heiner Ryssel, Hans Glawischnig
Springer-Verlag, 1983 - Science - 556 pages
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Ion Implantation: Equipment and Techniques: Proceedings of the Fourth ...
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accelerator angle anode aperture applications argon arsenic atoms batch beam current beam line beam power bombardment boron calculated capsule carrier concentration chamber charge cooling damage defects depth device diffusion disk dopant doping effect electrical electron electrostatic emitter end station energy epitaxial etching experimental extraction Faraday Faraday cup Figure film function furnace furnace annealing GaAs heat implantation dose impurity increase interface ion beam ion beam mixing ion implantation ion source irradiation laser annealing limited mask maximum measured mechanical metal nitride nitrogen Nucl obtained optical oxide p-n junction parameters particles photoresist Phys plasma plate PMMA polysilicon power density pressure produce profiles pulse pump radiation region Rutherford backscattering sample scanning semiconductor sheet resistance shown in Fig shows silicon species sputtering steel subcollector substrate surface target technique thermal thickness throughput tion tube uniformity vacuum voltage wafer temperature