Ion implantation techniques: lectures given at the Ion Implantation School, in connection with the Fourth International Conference on Ion Implantation: Equipment and Techniques, Berchtesgaden, Fed. Rep. of Germany, September 13-15, 1982
Heiner Ryssel, Hans Glawischnig
Springer-Verlag, 1982 - Science - 372 pages
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Ion Implantation System Concepts By H Glawischnig With 12 Figures
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Ion Implantation Techniques: Lectures given at the Ion Implantation School ...
H. Ryssel,H. Glawischnig
No preview available - 2011
acceleration analysis analyzed annealing anode aperture arc chamber atomic number backscattering beam current beamline boron calculated cathode source charge cold cathode collision cryopump damage defects density depth profiling device diffusion disk dislocation dopant doping effects electrical electronic stopping electrostatic elements energy loss experimental extraction Faraday cup feed material filament four-point probe function geometry high-current hot cathode impurity insulators ion beam ion implantation ion source ionisation ionization lattice layer loops machines magnetic field mass measurements Meth neutral Nucl nuclear stopping obtained operation oxide parameters particles Pearson distributions Phys plasma plasma surface potential power supply pressure projected range pumping radiation region sample secondary ion semiconductor sheet resistance shown in Fig shows silicon SIMS solid space-charge sputtering yield stopping powers structure substrate Table target technique temperature thermal threshold voltage tion typical uniformity vacuum values velocity wafer x-ray