ISTFA 2011: Conference Proceedings of the 37th International Symposium for Testing and Failure Analysis : November 13-17, 2011, San Jose Convention Center, San Jose, California, USA
ASM International, 2011 - Electronic apparatus and appliances - 456 pages
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Sample Preparation and Device Deprocessing I
Nanoprobing and Electrical Characterization I
Sample Preparation and Device Deprocessing II
Nanoprobing and Electrical Characterization II
FA Process and Case Studies II
Manuscript from 2010 Conference
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Istfa 2011: Conference Proceedings from the 37th International Symposium for ...
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37th International Symposium ampliﬁer applied ASM International Atom Probe backside capacitor chemical chip circuit clock clock signal contamination cross section cross-section defect detector device diagnosis dSIL EBAC electrical electron emission etch failing Failure Analysis ﬁeld Figure ﬁlm FinFET ﬁrst ﬂoating ﬂop ﬂow Focused Ion Beam frequency gate oxide identiﬁed IEEE implant inﬂuence InGaAs Integrated Circuits ISTFA l.lv l.lv l.lv laser layer leakage localization lock-in lock-in frequency material measurement mechanical metal method Microscopy nanoprobe node OBIRCH observed optical package parameters performed photon probe proﬁle reﬂectance region resistance root cause sample preparation San Jose scan chain semiconductor setup shown in Fig shows signal silicon simulation solar cell speciﬁc SRAM structure substrate surface Symposium for Testing technique temperature Testing and Failure thermal Thermography thickness thin transistor USA Copyright voltage wafer wavelength wire bonding