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VacancyType Defects in As + Implanted SiO243 nmSi Proved
Transient Photoconductivity from the Steady State in Undoped 1879 Doroteo MENDOZA
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absorption accepted for publication annealing Appl atoms August 29 band band gap beam calculated cell chemical vapor deposition coefficient concentration crystal curve decreases density dependence device diameter diffraction distribution doped effect elec electric electron electron mobility emission energy epitaxial etch rate EXAFS experimental fabricated Figure function GaAs GalnAs growth hydrogen increase intensity interface irradiation KEYWORDS laser lattice layer Lett magnetic field mask measured metal method observed obtained optical oxide oxygen parameters particles pattern peak phase photocathode photon Phys plasma polarized poly-Si polycide potential pressure Proc pulse ratio region resist sample scattering shown in Fig shows signal silicide silicon simulation sintering SiO2 solar cells solid specimen spectra spectrum sputtering structure substrate substrate temperature superconducting surface thermal thickness thin films tion Torr ture vapor voltage wafer wavelength width X-ray X-ray diffraction YBCO