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Japanese Journal op Applied Physics Vol 9 No 1 January 1970
Japanese Journal of Applied Phyisics Vol 9 No 2 February 1970
Japanese Journal op Applied Physics Vol 9 No 4 April 1970
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absorption acoustic amplitude anisotropy aperture appl applied voltage arsenic atoms axis barrier beam bolometer boundary calculated capacitance cathode cell characteristics concentration constant copper Curie temperature curves cylinder decrease density deposited dielectric diffraction pattern diffusion diodes discharge dislocations distribution doped effect electron emission energy epitaxial equation etch evaporated experimental ferrite ferroelectric Figure film frequency function GaAs glass growth heat treatment impurity increase intensity ions irradiance Japan KLTN laser lattice lattice constant layer liquid magnetic field maximum measured melting mode observed obtained optical orthorhombic oscillation oxide oxygen p-n junction phase photoconductivity Phys piezoelectric plane plasma pressure pulse ratio region resistance room temperature rotation sample saturation magnetization scattering Schottky barrier selenium shown in Fig shows signal silicate glass silicon single crystal solid specimen spectra structure substrate surface tantalum temperature dependence thermal thickness tion Torr transducer tube tungsten vacuum voltage wave X-ray