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Temperature Dependence of the Reflected Trimethylgallium Flux L 1036 Yoshimasa OHKI and Yuji HIRATANI
OxidePowderCovered Annealing in GaAs L 1043 Masato YOSHIDA Kazushi SHIMIZU Hiroyuki
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accepted for publication annealing Appl APPLIED PHYSICS array atoms beam binary bipolar BSCCO cell composition current density dangling bonds decrease deposition devices diode doping electron energy epitaxy experimental results fabricated Figure filter flux Fourier transform frequency function GaAs grain growth hydrogen increase input intensity irradiation JAPANESE JOURNAL KEYWORDS laser lattice lattice constants layer Lett liquid crystal logic magnetic field matrix measured method mode molecular beam epitaxy observed obtained operation optical computing optoelectronic output oxide oxygen parallel parameters peak phase photodiode Phys pixel plane plasma polarization pressure Proc publication June 13 pulse ratio resistance resonance RHEED room temperature sample shown in Fig shows signal silicon sintered spatial spatial light modulator spectra structure substrate substrate temperature superconducting surface temperature dependence thickness thin films threshold tion Tokyo ture vector voltage waveguide wavelength X-ray diffraction YBCO