Magnetoelectronics and magnetic materials: novel phenomena and advanced characterization : symposium held December 1-5, 2002, Boston, Massachusetts, U.S.A.
This volume combines the proceedings of Symposium Q, "Magnetoelectronics--Novel Magnetic Phenomena in Nanostructures, and Symposium R, "Advanced Characterization of Artificially Structured Magnetic Materials, both from the 2002 MRS Fall Meeting in Boston. The common focus is on artificially engineered nanostructured magnetic systems. The two symposia address new phenomena in magnetoelectronic applications, their preparation, and advanced methodology for characterization. Interest in nanomagnetism has been catalyzed by advances in two fields of research. 1) Advances in materials synthesis of structures whose length scales transcend magnetic length scales and open the possibility for creating materials with new magnetic properties. Such structures include interfaces, superlattices, tunneling devices, nanostructures, and single-molecule magnets. 2) Advances in sample characterization techniques for nanomagnetism which allow detailed exploration of structure-property relationships in nanostructured magnetic systems. The volume highlights current trends in both fields and offers an outlook for further advances and new capabilities.
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Volume 715 Amorphous and Heterogeneous SiliconBased Films2002 J R Abelson J B Boyce
Simulations of the Domain State Model
Rotating Anisotropics Without Superparamagnetic Grains
28 other sections not shown
2003 Materials Research alkanethiolate anisotropy annealing antiferromagnetic Appl applied field atomic calculated carbon Christou coercivity configuration CoPt curves D. N. Hendrickson decrease density diffraction domain wall easy axis effect electron energy equation exchange bias exchange coupling exchange interaction experimental Fe/oil ferromagnetic Figure frequency function gate grain Hamiltonian hysteresis loops in-plane increasing interface ions lattice Lett linewidths low field LSMO Magn magnetic field magnetic properties magnetic tunnel junctions magnetoresistance Materials Research Society measurements metallic micromagnetic microwave molecule monolayer multilayers nanoparticles observed orientation oxide paramagnetic parameters particles peak perpendicular phase Phys plane quantum computer quantum tunneling qubits ratio resistance resonance reversal samples saturation magnetization sheet resistance shown shows SMMs spacer spectra spin spin-valve spintronics structure substrate surface switching temperature dependence thermal thickness thin films transition trilayers tunnel junction values voltage zero