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Intermixinginduced tunability in infraredemitting InGaAsGaAs quantum dots 379404
MATERIALS AND DEVICES FOR THz GENERATION AND DETECTION
Modeling terahertz radiation from a photoconducting structure 379409
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absorption annealing Appl applications Auger recombination band BEP ratio bias bolometer bootstrapped buffer amplifier capacitor CdTe chessboard-like circuit clock dark current decreases density detection device diffusion diode dipole doping effects Electronics emission excitation far-field FDTD Figure film frequency GaAs substrate gate growth HgCdTe high-speed image sensor impedance impurities In,Ga)As/GaAs infrared detectors inhomogeneous input integration interface intermixing lasers layer Lett linearity material measured metal Mg concentration microbolometer multiplexer n-well noise non-linearity optical output parameters peak performance photoconducting structure photoconductive photocurrent photodetectors photodiode photomixer photon photovoltaic Phys pixel PL intensity plane polyimide PtSi pulse pyroelectric quantum dot QWIP radiation radiative recombination resistance response sample scan semiconductor shift register shown in Fig shows signal silicide simulation single crystals spectral SPIE Conference SPIE Vol spiral spot superlattice surface TDI array technique temperature thermal trilinear voltage wavelength ZnMgSe ZnSe