Microwave MESFETs and HEMTs
John Michael Golio
Artech House, Jan 1, 1991 - Technology & Engineering - 349 pages
This book takes the reader from the basic operating principles of the microwave MESFET and HEMT to the application of device models in modern CAD programmes. In addition to explaining device operation and modelling, the book provides detailed specific algorithms which can be used to efficiently determine the parameters needed to utilize the available device models. Detailed comparisons of MESFET and HEMT performance are presented, and ultimate limitations to these devices are discussed.
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advanced Curtice model AlGaAs amplifier applied bias conditions bias levels breakdown voltage carrier channel characteristics conduction band depletion region determined device models diode doping density drain current drain-source current drain-source voltage electric field Electron Devices Lett electron mobility element values equation equivalent circuit expression Frequency GHz GaAs MESFET gain-bandwidth product gate length gate width gate-drain capacitance gate-source capacitance gate-source voltage HEMT models IEEE Microwave Theory IEEE Trans input large-signal model layer load-pull material maximum MESFET model MESFET or HEMT MESFETs and HEMTs method microns microwave MESFET Microwave Theory Tech minimum noise figure mixer MMIC model parameters noise model noise parameters noise power nonlinear obtained ohmic contacts optimization oscillation output conductance output power output resistance p-n junction parameter extraction parasitic resistances performance pinch-off predictions S-parameters saturation Schottky Schottky barrier Section semiconductor signal simulation small-signal Symp technique transconductance typically valence band velocity WFlds