Monitoring and control of plasma-enhanced processing of semiconductors: 1-2 November 1988, Santa Clara, California
SPIE, 1989 - Technology & Engineering - 147 pages
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A. A. Studna absorption annealing Appl AR/R beam bonds CdTe chemical vapor deposition chemisorption CL spectra coverage Crystal Growth curve D. E. Aspnes D.V. Tsu density deposition chamber deposition rate detection device dielectric effect electron end-point energy etch rate Figure film deposition flow rate frequency films GaAs GaAs surface grown growth chamber heterostructures hydrogen in-situ increase InSb intensity interface interferometry laser lattice Lett Lucovsky materials metal modulation molecular beam epitaxy monitoring mTorr noble gas observed obtained OMCVD optical emission oxide parameters peak phonon Photoreflectance photoresist Phys pressure quantum Raman scattering Raman spectroscopy ratio RD signal reaction pathways reactor remote plasma enhanced RHEED sample SCCM semiconductor semiconductor surface shown in Fig shows SiH4 silane silicon dioxide silicon nitride species spectrum SPIE sputtering structure studies technique Technol TEOS thermal thickness thin films TMG molecule wafer wavelength ZnSe ZnSe/GaAs