Monte Carlo Modeling for Electron Microscopy and Microanalysis
This book describes for the first time how Monte Carlo modeling methods can be applied to electron microscopy and microanalysis. Computer programs for two basic types of Monte Carlo simulation are developed from physical models of the electron scattering process--a single scattering program capable of high accuracy but requiring long computation times, and a plural scattering program which is less accurate but much more rapid. Optimized for use on personal computers, the programs provide a real time graphical display of the interaction. The programs are then used as the starting point for the development of programs aimed at studying particular effects in the electron microscope, including backscattering, secondary electron production, EBIC and cathodo-luminescence imaging, and X-ray microanalysis. The computer code is given in a fully annotated format so that it may be readily modified for specific problems. Throughout, the author includes numerous examples of how such applications can be used. Students and professionals using electron microscopes will want to read this important addition to the literature.
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2 Constructing a Simulation
3 The Single Scattering Model
4 The Plural Scattering Model
5 The Practical Application of Monte Carlo Models
6 Backscattered Electrons
7 Charge Collection Microscopy and Cathodoluminescence
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array atomic number backscattered electrons backscattering coefficient begin Bethe range Bremsstrahlung calculate carbon carriers Chap computed continuum coordinates copper d(pz defect density depth detector direction cosines display distance EBIC effect elastic scattering electron beam electron range electron volts energy loss equation exit experimental data Figure film foil fraction function GetMaxY given goto incident beam energy incident electron integer interaction material mean free path microanalysis microscopy Monte Carlo method Monte Carlo model Monte Carlo simulation parameters PASCAL plot plural scattering model position procedure produced random number ratio readlin reset result Rutherford cross section sample scattering angle scattering events scattering Monte Carlo Schottky screen secondary electron semiconductor signal silicon single scattering model specimen step length stop—pwr stopping power surface target thickness trajectory step trunc TURBO PASCAL variables variation x-ray x-ray production xyplot
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Advances in Imaging and Electron Physics, Volume 145
Peter W. Hawkes
Limited preview - 2007