Multicomponent oxide films for electronics: symposium held April 6-8, 1999, San Francisco, California, U.S.A.
The exceptional properties of multicomponent oxides, combined with the inability of simpler materials to meet the increasing demands of the electronics industry, have motivated tremendous interest and activity in utilizing multicomponent oxides for electronic applications. For these applications, it is often desirable to integrate complex oxides in thin-film form with other materials. This book focuses on common materials issues involved in the processing and characterization of multicomponent oxides and how these issues relate to device applications. Papers range from theoretical explanations of the magnetic and electronic properties of transition metal oxides, to integration with silicon technology. Noteworthy is the progress being made in the deposition and characterization of these complex materials, as well as their applicability in ferroelectric memories, MOSFETs, optical devices, infrared imaging arrays, etc. Topics include: epitaxial multicomponent oxide film growth; properties, characterization and modeling; properties of multicomponent oxides; and multicomponent oxide devices.
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1999 Materials Research annealing Appl applications atomic barrier BaTiO3 BST film buffer layer bulk capacitors ceramic chemical composition crystalline curve decrease density device dielectric constant domain doping effect electric field electrode energy epitaxial etch Faraday rotation ferroelectric film ferromagnetic Figure film thickness films deposited films grown frequency grain boundaries growth heterostructures hysteresis in-plane increases interface junction lattice parameters LCMO leakage current Lett LSMO magnetic field magnetoresistance manganite Materials Research Society measured metal microstructure miscut mTorr observed optical oriented oxygen peak perovskite phase Phys polarization Proc properties PTZT pulsed laser deposition Raman ratio resistivity room temperature sample saturation magnetization scan shown in Fig shows silicon single crystal sol-gel spectra sputtering SrTiO3 stoichiometry structure substrate substrate temperature superconductors Symp Ta2Os temperature dependence thermal thin films tin oxide unit cell wafer X-ray diffraction YBCO