Nanometer CMOS

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Pan Stanford Publishing, Feb 28, 2010 - Technology & Engineering - 340 pages
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This book presents the material necessary for understanding the physics, operation, design, and performance of modern MOSFETs with nanometer dimensions. It offers a brief introduction to the field and a thorough overview of MOSFET physics, detailing the relevant basics. The authors apply presented models to calculate and demonstrate transistor characteristics, and they include required input data (e.g., dimensions, doping) enabling readers to repeat the calculations and compare their results. The book introduces conventional and novel advanced MOSFET concepts, such as multiple-gate structures or alternative channel materials. Other topics covered include high-k dielectrics and mobility enhancement techniques, MOSFETs for RF (radio frequency) applications, MOSFET fabrication technology.

 

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Contents

Chapter One The Evolution of Silicon Electronics
1
Chapter Two MOSFET Theory
35
Chapter Three Nanoscale MOSFETs
129
Chapter Four MOSFETs for RF Applications
219
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About the author (2010)

Dr. Frank Schwierz is head of the RF & Nanoelectronics Research Group at Technische Universitšt (TU) Ilmenau, Germany.