Nanostructures and microstructure correlation with physical properties of semiconductors: 20-21 March 1990, San Diego, California
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QUANTUM STRUCTURES AND DEVICES
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2DEG alloy annealing Appl applied magnetic field atomic ballistic band barrier calculated cavity channel coherence conductance fluctuations confinement crystal defect density devices diameter diffraction diode EBIC effects electric electron beam lithography energy epitaxial equation etching experimental fabricated Fermi Fermi energy Figure focused ion beam function GaAs GaAs/AlGaAs gate length grown growth HEMTs heterostructure increasing interface Kane model Lett magnetic field material measurements MESFETs miniband mode modulation molecular beam epitaxy Nanostructure noise observed optical oscillations oxide parameters pattern peaks periodic phase phonon Phys PMMA potential probe QUADFET quantization quantum dots quantum interference quantum waveguide structure quantum wire QW width Raman ratio region resistance resonant tunneling sample scattering semiconductor shown in Fig shows SiGe SiGe layers SL's Solid State Electronics spectra subbands substrate superlattice surface technique temperature thick transconductance transmission probability two-dimensional voltage wave wavefunction waveguide zero