## Negative conductance in bulk gallium arsenide at high frequencies |

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applied voltage assumed bolometer mount boundary conditions bulk GaAs cathode conduction band Current-voltage characteristics Debye length decreased dielectric relaxation dipole layers doping concentration drift velocity drift-current curve electric field curve electron concentration electron population experimentally observed Function of Applied gallium arsenide Gc/s Gunn and Elliot high-field region homogeneous inhomogeneous field distribution Kroemer's model linear approximation low-field resistance low-mobility maximum efficiency maximum negative conductance measurements of Gunn minimum mode of operation n-type GaAs na(E negative conductance mode negative differential conductance negative differential mobility nQL product optimum oscillations Peak pulse powers percent predicted quasi-neutrality curve r-f envelope reflection type amplifiers region of applied sample begins short circuit shown in Figure stable domains static field inhomogeneities temperature threshold field threshold for traveling threshold voltage transit-time frequency transport equations traveling domains tunable v/cm valence band velocity versus electric versus electric field video lead voltage for traveling voltage pulse waveguide cavity X-band frequencies