What people are saying - Write a review
We haven't found any reviews in the usual places.
7 other sections not shown
Other editions - View all
According to Eq admittance amplifier stage anode attenuator available gain average bandwidth capacitance carriers cathode channel collector common emitter conductance gs correlated defined detector device under test drain noise effect electrons Englewood Cliffs equation equivalent circuit equivalent noise resistance equivalent noise temperature equivalent saturated diode FET's figure F flicker noise Fourier frequency interval Friiss full shot noise gate generation-recombination noise give a contribution grid hence high frequencies holes of group I.E.E.E. Trans independent injection input circuit junction FET low frequencies maser MOS FET noise current noise diode noise figure noise measure noise power noise source Nyquist's theorem obtained ohms output conductance output noise power parallel power gain Prentice-Hall Proc pulse random variable recombination region saturated diode current semiconductor short-circuited shot noise shown in Fig spectral intensity stage under test surface term thermal noise transconductance transistor trapped triode tuned tunnel diode zero Ziel