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According to Eq admittance amplifier stage anode attenuator available gain average bandwidth capacitance carriers cathode channel collector common emitter conductance g device under test drain noise effect electrons Englewood Cliffs equation equivalent circuit equivalent noise resistance equivalent noise temperature equivalent saturated diode FET's figure F flicker noise Fmlo Fourier Friiss full shot noise generation-recombination noise give a contribution grid hence HF amplifier high frequencies holes of group I.E.E.E. Trans image frequency independent injection input circuit junction FET low frequencies maser MOS FET noise current noise diode noise figure noise measure noise power noise source Nyquist's theorem obtained ohms output conductance output noise power parallel power gain Prentice-Hall Proc pulse random variables recombination region saturated diode current semiconductor short-circuited shot noise shown in Fig spectral intensity stage under test surface Sx(f term thermal noise transconductance trapped triode tuned tunnel diode yields zero Ziel