Operation and Modeling of the MOS Transistor

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Oxford University Press, 1999 - Computers - 620 pages
Extensively revised and updated, this, the second edition of the highly praised text Operation and Modeling of The MOS Transistor, has become a standard in academia and industry. The book provides a thorough treatment of the MOS transistor-the key element of most modern microelectronic chips.
KEY FEATURES
.Unified, careful treatment. The book covers in depth the development of many important models, ranging from the simple to the sophisticated, with the connection between models clearly identified. Many aspects of modeling are covered, including: dc, ac, small-signal, large-signal transient, quasi-static, nonquasi-static, and noise.
.Expanded coverage. New material is included on a number of topics, including charge sheet models, small-dimension effects, noise, and modeling for RF applications.
.New chapter on modeling for CAD. A completely new chapter discusses the context, considerations, and pitfalls associated with the development of models for computer-aided design, and describes ways to evaluate them.
.Extensive Bibliography. A thoroughly updated, greatly expanded bibliography is provided."

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sir i am very keen to read the mos descirption that is given in your book.this book have good description on the topics as small signal Modelling and circuit simulation.so pls you can provide me a e- book of the the same edition.
thanking you

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About the author (1999)

Yannis Tsvidis is at Colombia University.

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