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SESSION 1B MASK TECHNOLOGY II
ALIGNMENT AND OVERLAY
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accuracy aerial image alignment mark astigmatism bandwidth beam calculated chrome condenser aberrations deep UV defect defocus depth of focus design rules device diffraction distortion dose edge entrance pupil etalon etch evaluated excimer laser excimer laser stepper experimental exposure energy exposure field feature film flood exposure focus depth function g-line i-line illumination image field image reversal intensity KrF excimer laser layer lenses light lines and spaces linewidth mask measured microlithography micron nominal numerical aperture offset optical lithography optical system overlay errors parameters partial coherence pattern performance photolithography photoresist pixels plane PMMA position production projection lens proximity effect pulse reduction lens resist process resist profile resolution reticle shown in Figure shows sigma silicon simulation slit spectral spherical aberration SPIE submicron substrate Table technique thickness transverse modes Ultratech variation VLSI wafer stepper wavelength wavelength stabilization width X/NA