Permanent damage effects of nuclear radiation on the X-band performance of silicon Schottky-barrier microwave mixer diodes
James M. Kenney, Institute for Applied Technology (U.S.). Electronic Technology Division, United States. Defense Nuclear Agency
U.S. Dept. of Commerce, National Bureau of Standards, Institute for Applied Technology, Electronic Technology Division, 1976 - Diodes, Schottky-barrier, Effect of radiation on - 26 pages
What people are saying - Write a review
We haven't found any reviews in the usual places.
Other editions - View all
9 Diodes automatic data processing average noise figure Bureau of Standards calorimeter Change from Previous changes in conversion Control Group conversion insertion loss conversion loss destroyed not included Deviation Gamma Group Deviation of Changes diode accidently destroyed diode measurement Diodes Per Group diodes were measured fast neutrons fluence of 5.5 forward current gamma group diode Harry Diamond holder i-f output conductance included in mean intermediate frequency loss and SWR Mean Gamma Measurement Gamma Group measurement system Median Gamma Group microwave mixer diodes mixer output voltage National Bureau neutron fluence neutron group diode Neutron Group Figure nominal local oscillator Nuclear Radiation Number of Diodes oscillator power Oscillator Return Loss output noise ratio overall average noise Pooled Previous Measurement Gamma radiation hardness radiation levels Sample Standard Deviation Schottky diodes Schottky-Barrier Microwave Mixer self-bias voltage signal power Standard Deviation Gamma Standing Wave Ratio systematic drift technical unaffected waveguide