Physics of high-speed transistors
This book examines in detail the new physical principles and technological approaches that make high-speed transistors possible. It includes discussions of maximum drift velocity in semiconductors, hot-electron transistors, and high-speed devices and integrated circuits to provide a comprehensive overview for physicists, engineers, and students who wish to apply this technology to computer and microwave development.
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AlGaAs AlGaAs layer Appl ballistic electron band diagram base calculated capacitance channel charge carriers circuits cm/sec collector barrier collector current conduction band current gain devices drain current drift velocity effect electric field electron gas electron mobility electron transistor emitter energy experimentally fabricated field-effect transistors function GaAs GaAs FET GaAs MESFETs GaInAs graded bandgap heteroj unction heterojunction bipolar transistors heterostructure high-speed hot electrons hot-electron transistors I—V characteristics IEEE IEEE Electron Dev IEEE Trans impurities increases injected electrons kV/cm Lett magnitude maximum MESFET metal microwave MODFET molecular beam epitaxy mS/mm negative resistance nm thick obtained operating speed oscillations p-n junction parameters phonons Phys planar-doped plasma potential psec quantum region resonant tunneling saturation Schottky barrier semiconductor shown in Fig silicon source and drain structure submicrometer substrate superlattice switching thin-film transistors threshold voltage transconductance transistor operating two-dimensional undoped values velocity overshoot wave