Polycrystalline Semiconductors: Physical Properties and Applications : Proceedings of the International School of Materials Science and Technology at the Ettore Majorana Centre, Erice, Italy, July 1-15, 1984Günther Harbeke |
Contents
Atomic Structure of Grain Boundaries By A Bourret With 5 Figures | 2 |
Computer Calculations of Grain Boundary Energies in Germanium | 18 |
Grain Boundary Segregation Grain Boundary Diffusion | 47 |
Copyright | |
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Polycrystalline Semiconductors: Physical Properties and Applications ... G. Harbeke Limited preview - 2012 |
Polycrystalline Semiconductors: Physical Properties and Applications ... G. Harbeke No preview available - 2012 |
Common terms and phrases
ac TFD amorphous annealing Appl applied voltage atomic band barrier height beam bias bicrystal boundary charge bulk traps Burgers vector calculated capacitance capture ceramics coefficient concentration conduction band conductivity curve dangling bond defects demi-step density dependence devices discussed dislocation distribution donor doped EBIC effect electrical electron emission emitter energy equation equilibrium experimental Fermi level frequency function GaAs given grain boundary grain boundary diffusion impurity interface lattice layer Lett LPCVD luminescence material measurements method minority carriers obtained operations optical oxide oxygen p-n junction parameters Phys polycrystalline silicon polysilicon potential barrier precipitation properties recombination region relaxation sample Schottky segregation semiconductors shown silicon films single crystal space charge spacegroup sphalerite structural unit surface symmetry technique temperature thermionic thermionic emission thin film threshold voltage tion transistor tunnel ture valence valence band values varistor ZnS:Mn