Porous Silicon: Material, Technology and Devices
H. Münder, R. Hérino, W. Lang
Newnes, Jul 8, 1996 - Technology & Engineering - 344 pages
These proceedings represent the most recent progress in the field of porous silicon. Several papers present results in which the influence of the formation parameters on the structural and optical properties has been investigated. Further topics dealt with include: the influence of light during the formation process on the photoluminescence behaviour; fundamental mechanism of the photoluminescence; the electroluminescence of porous silicon; applications based on porous silicon; charge carrier transport.
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Mechanisms of Light Emission
Characterisation of Porous Silicon Properties
Other LightEmitting Structures
Porous Silicon Luminescence
Porous Silicon Applications
1996 Elsevier Science absorption annealing anodisation anodization Appl atoms band bandgap bonds carrier crystallites current density dangling bonds decay decrease defects dependence deposition devices dielectric function diffraction doped effect electrochemical electroluminescence electrolyte Elsevier Science S.A. energy erbium etching excitation excitons experimental ﬁeld ﬁlms ﬁrst ﬁt illumination implantation increase inﬂuence inset interface Keywords L.T. Canham laser layer thickness Lett light emission luminescence material measurements nanocrystallites nanocrystals nanoporous observed obtained optical oxidation p-type parameters particles peak photoluminescence photoluminescence PL photon Phys PL intensity PL spectra polarization polyaniline polymer pores porosity porous layer porous silicon porous silicon layers potential Proc proﬁle properties pulse quantum efﬁciency quantum wires quenching Raman recombination reﬂection samples shift shown in Fig shows Solid Films 276 spectrum structure substrate surface temperature thermal Thin Solid Films valence band voltage wafers wavelength wire