Principles of LithographyLithography is a field in which advances proceed at a swift pace. This book was written to address several needs, and the revisions for the second edition were made with those original objectives in mind. Many new topics have been included in this text commensurate with the progress that has taken place during the past few years, and several subjects are discussed in more detail. This book is intended to serve as an introduction to the science of microlithography for people who are unfamiliar with the subject. Topics directly related to the tools used to manufacture integrated circuits are addressed in depth, including such topics as overlay, the stages of exposure, tools, and light sources. This text also contains numerous references for students who want to investigate particular topics in more detail, and they provide the experienced lithographer with lists of references by topic as well. It is expected that the reader of this book will have a foundation in basic physics and chemistry. No topics will require knowledge of mathematics beyond elementary calculus. |
Contents
Overview of lithography | 1 |
Optical pattern formation | 7 |
Photoresists | 53 |
Modeling and thin film effects | 99 |
Wafer steppers | 139 |
Overlay | 199 |
Masks and reticles | 243 |
Confronting the diffraction limit | 273 |
Metrology | 313 |
The limits of optical lithography | 331 |
Lithography costs355 | 355 |
Alternative lithography techniques | 375 |
Coherence | 413 |
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Common terms and phrases
aberrations alignment marks alignment system angle antireflection coatings bandwidth best focus catadioptric Chapter chemically amplified resists cost defocus depth-of-focus diffraction discussed edge effects electron beam etch EUV lithography excimer laser exposure field exposure tools Figure fused silica i-line immersion lithography index of refraction intrafield k₁ layer lens elements lens reduction lenses light sources lines materials metrology microlithography multilayer numerical aperture off-axis illumination optical lithography optical proximity corrections overlay errors overlay measurement parameters partial coherence pattern pellicle phase phase-shifting mask photoacid photolithography photomasks photoresist pitch plane position post-exposure bake problem Proceedings of SPIE produced profiles projection optics reduce reflectance resist film resist process resist thickness resolution reticle scanning semiconductor shown in Fig silicon spin coating step-and-repeat step-and-scan systems substrate surface Technol temperature throughput typically variations wafer stage wafer steppers wavelength x-ray lithography