Rapid Thermal Processing: Science and Technology
Richard B. Fair
Academic Press, Dec 2, 2012 - Technology & Engineering - 430 pages
This is the first definitive book on rapid thermal processing (RTP), an essential namufacturing technology for single-wafer processing in highly controlled environments. Written and edited by nine experts in the field, this book covers a range of topics for academics and engineers alike, moving from basic theory to advanced technology for wafer manufacturing. The book also provides new information on the suitability or RTP for thin film deposition, junction formation, silicides, epitaxy, and in situ processing. Complete discussions on equipment designs and comparisons between RTP and other processing approaches also make this book useful for supplemental information on silicon processing, VLSI processing, and integrated circuit engineering.
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Chapter 4 ThinFilm Deposition
Chapter 5 Extended Defects from Ion Implantation and Annealing
Chapter 6 Junction Formation in Silicon by Rapid Thermal Annealing
Chapter 7 Silicides
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activation energy amorphous layer annealing temperature Appl atoms boron C. M. Osburn chamber chemical vapor deposition cluster concentration CoSi2 deposition rate devices dielectric dislocation loops dopant doping dose effect Electrochemical Society Electron Dev emissivity emitter epitaxial growth FIGURE films furnace furnace annealing G. A. Rozgonyi gate heat source IEEE IEEE Trans increase interface interstitials ion implantation J. F. Gibbons kinetics lamp Lett LPCVD metal nitridation nonuniformity optical oxygen Phys point defects poly-Si polycide polysilicon Proc pyrometer quartz R. B. Fair radiation Rapid Thermal Annealing rapid thermal processing reaction reactor reduced region RTCVD RTP systems Self-Aligned self-interstitials Semiconductor Shallow Junctions sheet resistance shown in Fig SiH4 Silicide Formation silicon single-wafer SiO2 stress substrate surface susceptor Symp techniques Technol Technology thermal budget thermal oxidation thin TiSi2 Titanium Silicide transient transistors type II defects VLSI voltage wafer wavelength