Scientific Charge-coupled DevicesThe charge-coupled device (CCD) has recently celebrated its 30th birthday. The remarkable invention of Boyle and Smith of Bell Labs has dramatically changed the course of imaging in disciplines ranging from astronomy to biotechnology. James R. Janesick, an early proponent of the Scientific CCD, presents a careful and comprehensive history, tutorial and state-of-the-art description of the CCD. The book provides valuable reference information to scientists, engineers and hardware managers involved with imaging CCDs and high-performance camera systems, as well as those who need a comprehensive introduction to the subject. ""Charge-Coupled Devices"" is both a history of this development and a comprehensive reference manual on CCD and camera design, fabrication, operation, characterization and optimization. The key processes of CCD operation - charge collection, charge transfer and charge measurement - are described physically and illustrated by experimental data. Standards for characterizing and optimizing CCDs are presented in detail and the ultimate physical limitations on performance parameters discussed. Worked examples throughout provide valuable tutorials, and give the reader an appreciation for the level of performance that is being achieved by today's CCDs. |
Contents
History Operation Performance Design Fabrication and Theory | 3 |
CCD Transfer Curves and Optimization | 95 |
Charge Generation | 167 |
Charge Collection | 273 |
Charge Transfer | 387 |
Charge Measurement | 489 |
Noise Sources | 605 |
Damage | 721 |
| 841 | |
Appendixes | 847 |
Glossary of CCD Terms | 871 |
| 899 | |
Common terms and phrases
1/f noise approximately array Assume backside backside-illuminated CCD barrier phase bias capacitance channel stop charge packet charge transfer Charge-Coupled Devices clock constant CTE performance damage dark current dark spikes deferred charge depletion region device doping drain electric field electrons energy epitaxial equation example flat-field frequency function gate voltage holes horizontal register implant interaction inverted ionization layer measured MOSFET noise floor operating temperature output amplifier oxide particle phase-3 photon transfer pixel pixel nonuniformity PIXELS Figure plots poly potential problem proton quantum QUANTUM EFFICIENCY quantum yield radiation rays read noise readout reset response sense node sensitivity sensor shield shot noise shown in Fig shows Si-SiO2 interface signal charge signal level silicon Solution spurious charge substrate surface target pixel thermal thickness thinned transfer curve traps vertical registers voltage VREF wavelength WF/PC x-ray
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