Selected Topics in Group IV and II-VI Semiconductors

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E.H.C. Parker, Peter Rudolph, G. Müller-Vogt, Robert Triboulet, E. Kasper
Newnes, Dec 2, 2012 - Science - 465 pages
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This book contains the proceedings of two symposia which brought together crystal growers, chemists and physicists from across the world. The first part is concerned with silicon molecular beam epitaxy and presents an overview of the most research being done in the field.

Part two discusses the problems dealing with purification, doping and defects of II-VI materials, mainly of the important semiconductors CdTe and ZnSe. The focus is on materials science issues which are the key for a better understanding of these materials and for any industrial application.

 

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Contents

OPTICAL PROPERTIES
1
SUPERLATTICES
45
MATERIAL ANALYSIS
61
SECTION IV STRAIN ADJUSTMENT
113
SECTION V COMPETING TECHNOLOGIES
147
SECTION VI DEVICES
195
SECTION VII NANOMETER STRUCTURES
248
GROWTH AND EQUIPMENT
285
TWODIMENSIONAL CARRIERS
353
NOVEL MATERIALS
386
Author index
442
Subject index
449
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