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Section Two 7 The structure of photosensitive lead sulphide and lead selenide deposits and
Treatise H Wilman Proceedings of the Physical Society 1948
Lead salt photoconductors
16 other sections not shown
1/f noise absorption acceptor applied band gap bias calculated capture cell CGL/CTL charge carriers Chem coefficient concentration conduction band constant corresponding crystal curves decay decrease density detectivity detector determined dielectric dielectric relaxation donor drift mobility effect electric field electrons and holes equation excitation exciton experimental Fermi level Figure film free carriers frequency function germanium heavy Cu-doped CdS hydrazone illumination impurity increase infrared quenching InSb ionization laser lattice layer Lett lifetime limit magnetic field material measurements noise observed obtained optical oscillations parameters PbSe peak photoconductivity photocurrent photoexcitation photogeneration photon Phys Physical Review pulse quantum efficiency radiation recombination centers region relaxation resistance response room temperature sample semiconductor sensitivity shown in Fig shows signal Solid spectral spectrum superlattice surface temperature dependence thermal tion transient transition trapping V/cm valence band velocity voltage wavelength xerographic