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Elementary Properties of Semiconductors
Energy Band Structure
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acceptor applied approximation assumed atom band edge band gap band structure Brillouin zone calculation carrier concentration carrier density conduction band consider cross section crystal current density curve deformation potential scattering denoted dependence dielectric constant diffusion diode direction donor doped drift velocity effective mass electric field electrons and holes emission energy band equation equilibrium exciton experimental factor Fermi energy Fermi level field intensity field strength frequency GaAs germanium given Hall effect Hence increasing InSb integral introduce ionized impurity scattering laser layer linear longitudinal low temperatures magnetic field magnetoresistance metal mobility momentum relaxation n-type n-type semiconductor neglected observed obtained optical order of magnitude oscillations p-n junction phonon photon energy Phys polar quantum ratio recombination room temperature sample scattering process Sect semiconductor shown in Fig shows silicon superlattice surface tensor thermal thermoelectric tion transistor transition valence band valleys vector voltage wave wavelength yields